Corvus Post subject: High isolation circuit Posted: Mon Feb 16,
2009 5:47 am Captain Joined: Mon Jul 18, 2005 12:55
pm Posts: 8 Hi everybody! I am designing a RF high isolation
switch of 6 samples. I am thinking into use HMC252QS24 from HITTITE.
The problem is that the isolation I obtain between signals is around
-50dBm but I need more. I am thinking into interconnect a monolitic
amplifier into each signal and switch ON/OFF the amplifier in order
to increase the isolation... Any more ideas?Better low cost solution?Another
interesting solution¿ Thanks and regards Top
RF Head Post subject: Re: High isolation circuitPosted: Mon
Feb 16, 2009 10:52 am Captain Joined: Mon Feb 09, 2009
12:26 pm Posts: 11 Looking at the data sheet the best you can
do from the 'common' line to any other is 38 dB (DC to 1GHz) and this
drops to 26 dB at 3 GHz. The data sheet does not show the isolation
between channels that are both 'off' If this is what you are referring
to then you can measure this and if this is the 50 dB figure you mention
then thats not bad. Note that much of the isolation will be down to
your board layout. If this is done well you may be able to improve on
your 50 dB figure. A simple way to work out what is down to the layout
is to remove the IC, terminate the unused pads with 0402 size 51 ohm
resistors and measure the isolation and see what you get. This removes
the 'leakage' that goes on inside the IC from the problem and tells
you what the layout is like. I suggest you then ask the IC manufacturer
what they think is possible. Ultimately, if you want a lot more
isolation I suggest you use separate IC's and get some physical separation
between your channels. You will then be able to go a log higher in isolation.
Ensure you use a microstrip layout or better still a coplanar.
Enjoy Top yendori Post subject: Re: High
isolation circuitPosted: Mon Feb 16, 2009 11:18 am General
Joined: Thu Sep 25, 2003 1:19 am Posts: 50 Location: texarcana
Hi, What is your frequency range? Why not use 2 switches
in series. Check out Peregrine Semi. Rod Top
Corvus Post subject: Re: High isolation circuitPosted: Mon
Feb 16, 2009 12:11 pm Captain Joined: Mon Jul 18,
2005 12:55 pm Posts: 8 I found a good solution by using x6 units
of MINICIRCUITS with code M3SWA-2-50DR+ for each sample and then connect
the outputs of each switch to the input of switch of HITTITE HMC252QS24.
By simulating in ADS I obtain very good isolation between inputs around
90dB. The problem is that solution is expensive around 25 dollars only
in IC's. I am using six signals of 10MHz, 36MHz, 1950MHZ, 1056MHz 1052MHz
1550MHz. This first solution sounds good but on the other hand
is expensive and fills a lot of space in the PCB. Any cheap idea to
do the same?? Thanks and best regards to everyone!
Top nubbage Post subject: Re: High isolation circuitPosted:
Mon Feb 16, 2009 12:35 pm General Joined: Fri Feb
17, 2006 12:07 pm Posts: 218 Location: London UK I had a similar
problem with a 2 pole circuit, but my switching speed was low, about
250 microsecs. So I was able to use reed relay elements in a quasi-50
ohm stripline electro-mech swicth at 1300MHz. The isolation was around
85dB and power handling a couple of watts. _________________
At bottom, life is all about Sucking in and blowing out.
Top biff44 Post subject: Re: High isolation circuitPosted:
Sat May 02, 2009 9:27 am Colonel Joined: Wed Apr 08,
2009 11:07 am Posts: 33 You are having troubles because the laws
of physics are against you. Switches have isolation because either:
1: they use a device that provides a dead short circuit shunt to ground.
2) they use a device that provides a series open circuit In the
first case, the "dead short circuit" involves connecting the bottom
of the chip to the ground plane by via hole(s). If the via hole is a
real-world part, it has inductance and resistance. In other words, it
is not a "dead short circuit", and as such has limited ability to totally
reflect a signal. In the second case, the "open circuit" is not
pure either. There is often some capacitance in the diode or fet that
lets some signal blead thru, instead of being totally reflected. Also,
there can be crosstalk between two arms of the switch, especially where
the arms have to converge onto a small space to connect to the semiconductor
itself. So, you have practical limitations as to how much isolation
you can get out of one semiconductor. To solve this, you want to cascade
additional devices, physically separated from one another. To do so
successfully, you need to know something about the internals of the
device. For a FET series shunt sp2t switch, you could add an additional
shunt short circuit element (like a pin diode) quarterwave away from
each of the inputs. Alternatively, you could add an additional shunt
element at any distance away from the IC, but only IF the IC has a nonreflective
port when in isolation mode. You do not want a resonant length between
the IC and additional elements, causing a "bandpass" response instead
of the desired isolation. _________________ Rich Maguffin
Microwave Consulting www.MaguffinMicrowave.com
Posted 11/12/2012
|