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RF Micro Devices® Press Release - October 25, 2011
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RFMD Intros RF3826 30 MHz to 2500 MHz, 9 W
GaN Wideband Power Amplifier
Contact:
Irma Swain
Sr. Manager, Communications
RFMD
336-931-6653
iswain@rfmd.com |
RF3826 30 MHz to 2500 MHz, 9
W GaN Wideband Power Amplifier
 RFMD’s
new RF3826 is a wideband Power Amplifier designed
for continuous wave and pulsed applications
such as wireless infrastructure, RADAR, two-way
radios, and general purpose amplification. Using
an advanced high power density Gallium Nitride
(GaN) semiconductor process, this high-performance
amplifier achieves high efficiency, flat gain,
and large instantaneous bandwidth in a single
amplifier design. The RF3826 is an input-matched
GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability
through the use of advanced heat sink and power
dissipation technologies. Ease of integration
is accomplished through the incorporation of
optimized input matching network within the
package that provides wideband gain and power
performance in a single amplifier. An external
output match offers the flexibility of further
optimizing power and efficiency for any sub-band
within the overall bandwidth.
Features
- Advanced GaN HEMT and Heat-Sink Technology
- Input Internally Matched to 50Ω
- Output Power of 9 W
- 30 MHz to 2500 MHz Instantaneous Bandwidth
- Gain: 12 dB
- Power Added Efficiency: 45% (30 MHz
to 2500 MHz), 50% (200 MHz to 1800 MHz)
- Large Signal Models Available
- EAR99 Export Control
Applications
- Class AB Operation for Public Mobile
Radio
- Test and Instrumentation
- Power Amplifier Stage for Commercial
Wireless Infrastructure
- Civilian and Military Radar
- General Purpose Tx Amplification
For more information on RF3826, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RF3826.aspx.
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This message was distributed by
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Posted 10/25/2011 |
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