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RF Micro Devices® Press Release - October 31, 2011
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RFMD Intros RFHA1000, 50-1000 MHz, 15 W GaN Wideband Power Amplifier
Contact:
Irma Swain
Sr. Manager, Communications
RFMD
336-931-6653
iswain@rfmd.com |
 RFMD’s
RFHA1000 GaN Power IC (PIC) is a wideband power
amplifier designed for continuous wave and pulsed
applications such as military communications,
electronic warfare, wireless infrastructure,
radar, two-way radios and general purpose amplification.
Using an advanced high power density Gallium
Nitride (GaN) semiconductor process, this high-performance
amplifier achieves high efficiency, flat gain
and power over a large instantaneous bandwidth
in a single amplifier design. This GaN discrete
amplifier is 50Ω input-matched, and packaged
in a small form factor 5x6mm SOIC-8 outline
air cavity ceramic package that provides excellent
thermal stability through the use of advanced
heat sink and power dissipation technologies.
Ease of integration is accomplished through
the incorporation of an optimized input matching
network within the package that provides wideband
gain and power performance in a single amplifier.
An external output match offers the flexibility
of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Features
- Advanced GaN HEMT and Heat Sink Technology
- Input Internally Matched to 50Ω
- 28V Operation, Output Power of 15W
- 50MHz to 1000MHz Instantaneous Bandwidth
- Gain 17dB
- Power Added Efficiency 60%
- Large-Signal Models Available
- EAR99 export control
Applications
- Milcom, Public Mobile Radio
- Electronic Warfare
- Power Amplifier Stage for Commercial
Wireless Infrastructure
- Civilian and Military Radar
- General Purpose Tx Amplification
For more information on RFHA1000, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RFHA1000.aspx.
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Posted 10/31/2011 |
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