NOTICE This resume is protected by copyright and may not be reproduced in any form without the expressed consent of the owner.
Obtaining this resume from anywhere other than RF Cafe is strictly forbidden. Web Bots are expressly forbidden from collecting resumes from RFCafe.com
| |
Ivan R. Boshnakov 19 Laurel Court,
Chesham Bois, Amersham
Bucks, HP6 5LP
United Kingdom
Tel.: 01494 728612 (home)
07754257239 (mobile)
email: i.boshnakov@btinternet.com SUMMARY: I have more than 24 years experience in design and development of RF and microwave devices, project management and development team management. For the last 14 years I have specialized in the design and development of RF and microwave amplifiers. During this period I have developed to production level more than 200 amplifiers working anywhere in the frequency range from 50 MHz to 18GHz: from LNAs to broadband (2-18 GHz), to high-power (20W Class A, 150W Class AB), to linearized by RF analogue predistortion power amplifiers. Most of these amplifiers have been developed by using the MultiMatch Amplifier Design Wizard Software (www.ampsa.com) on its own or in conjunction with a general type simulator software program such as ADS, Microwave Office, GENESYS, etc. MultiMatch design procedures are based on very advanced network synthesis, component modeling and discontinuity modeling tools, which allow achieving first-time-right and optimum performance within much reduced development cycles. Though universally applicable to amplifiers design MultiMatch reveals its highest potential when used to develop RF IC and MMIC amplifiers. I have published two articles in Microwave Engineering Europe and one in High Frequency Electronics on the subject of practical design of RF/microwave amplifiers using MultiMatch in conjunction with Microwave Office. (See PUBLICATIONS, p. 4) These articles have also been included as design application notes for Microwave Office in the Knowledge Base of AWR Inc.
EMPLOYMENT HISTORY: June 2001- Present Aerial Facilities Ltd. (recently Axell Wireless) Senior Principal Engineer · For the first three and a half years I was managing the Amplifier Development team and then, after some reorganization, the Active RF Electronics Group. · During this period more than 120 RF/microwave amplifiers were developed to production level in the frequency range from 50 MHz to 2.5GHz: LNAs, medium power amplifiers, power amplifiers of up to 25W in Class A mode and up to 150W Class AB mode, broadband LNAs or drivers, tower-top LNAs with failure by-pass mode, etc. · For the last three years I also developed a series of linearized by RF analogue predistortion Class A power amplifiers and at the present I lead a program for linearization of Class AB amplifiers. · During the last two years I have been also involved in the development of fiber-optic transceivers. 1997 – 2001 REMEC Q-bit, Palm Bay, Florida Senior Project Engineer · Development of wide variety of RF and microwave amplifiers in the frequency range from 200 MHz to 4.5 GHz: broadband amplifiers (0.2 – 2 GHz, 2 – 4 GHz), LNAs, high dynamic range amplifiers, and medium power amplifiers up to 37dBm in balanced or single-ended configuration. · Technologies used: thin-film and thick-film hybrids, PCB, surface mount packages, flange packages, drop-ins, and connectorized cases. 1992 – 1997 Grinaker Avitronics, Pretoria, South Africa Senior Design Engineer · During the last three years at the Microwave Department of Avitronics I was responsible for the development of microwave amplifiers. Developed variety of broadband low noise amplifiers (such as 2 – 6 GHz or 2 – 18 GHz) for EW warning receivers in balanced or single-ended configuration and a must-head low noise amplifier with RF bypass for the GSM cell-phone industry. · Development of pin-diode switches and phase-shifters, VCOs, multi-way unequal power ratio dividers, etc. · During the last year at this job I was supervising and training two junior engineers. 1984 – 1992 “Electron” Institute of the “Cherno More” Radar and Navigation Equipment Plant, Varna, Bulgaria Senior Design Engineer · Involved in establishing a microwave hybrid integrated circuits development and production laboratory; where responsible for the selection and recommendation of RF & Microwave measurement equipment and design software. · Specialized in the development of microwave oscillators – VCOs, DROs. · Designed also Schottky-diode mixers, pin-diode switches and phase manipulators. EDUCATION: Higher Institute of Mechanical and Electrical Engineering (Technical University), Sofia, Bulgaria, 1984 – BSc and MSc in Radio-Electronics Engineering Additional training: · Courses at the University of South Africa: Economics 1, Business Economics 1, and General Management. · A three-day course for designing GaAs MMICs at TriQuint Semiconductors. · A four-day course on linearization of RF/microwave amplifiers with CEI-Europe led by Steve Cripps. · Workshop “Hybrids, Baluns and Transformers” at the IEEE MTT-S 2004. · Three different TARGET (www.target-net.org) workshops and schools on amplifier research topics. PUBLICATIONS: Ivan Boshnakov, Jon Divall. Tandem RF software programs streamline the design of power amplifiers. Microwave Engineering Europe, online edition, December 2002, http://www.mwee.com/features/showArticle.jhtml?articleID=12802301. Ivan Boshnakov. First time right design of Class A power amplifiers using the novel power parameters. Microwave Engineering Europe, February 2005, http://i.cmpnet.com/mwee/archive/feb05/mwee0205p30.pdf. Ivan Boshnakov. Practical Design Comparison Between High-Power GaAs MESFET and GaN HEMT. High Frequency Electronics, October 2007, http://www.highfrequencyelectronics.com/Archives/Oct07/HFE1007_Boshnakov.pdf ADDITIONAL INFORMATION: Nationality: Bulgarian, British Languages: Bulgarian, English, and Russian Birth date: 5 January 1958 |