Copyright: 1996 - 2024
BSEE - KB3UON
RF Cafe began life in 1996 as "RF Tools" in an AOL screen name web space totaling
2 MB. Its primary purpose was to provide me with ready access to commonly needed
formulas and reference material while performing my work as an RF system and circuit
design engineer. The World Wide Web (Internet) was largely an unknown entity at
the time and bandwidth was a scarce commodity. Dial-up modems blazed along at 14.4 kbps
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VDMOS_LDMOS_parameters[T] - RF Cafe Forums
RF Cafe Forums closed its virtual doors in 2012 mainly due to other social media
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but until then it is probably not worth the effort. Regardless, there are still
lots of great posts in the archive that ware worth looking at.
Below are the old forum threads, including responses to the original posts.
|-- Amateur Radio
Gripes & Humor
-- CAE, CAD, &
Test & Measurement
Post subject: VDMOS_LDMOS_parameters[T] Posted: Thu Nov 03,
2005 5:41 pm
Joined: Thu Nov 03, 2005 5:34
I need the papers about parameters
the amplifiers with transistors VDMOS, LDMOS versus temperature.
Is bias control necessarily in amplifier with LDMOS ??
the large influence of temperature on parameters in amplifiers with
transistors LDMOS ??
thanks for information
Post subject: Posted: Sat Nov 05, 2005 11:36 am
Joined: Mon Jun 27, 2005 2:02 pm
Hello again jarys,
Welcome to the
magnificent world of RF Power Amplifiers!
are sensitive to temperature (As any other active device). When the
temperature increases the Drain current Ids increases too and the output
power level increases with it. So you should provide a negative feedback
in order to reduce the drain current over temperature. This is done
by using a thermistor in the Gate circuit. The thermistor is part of
a voltage divider which reduces the Vgs voltage and by that reduces
the Drain current.
Here is a link to a Freescale (Formerly motorola)
which uses this scheme:
Should you need more information, please post and I will be keen
to help you!