Intel's "Evolution of Transistor Innovation"
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Intel's "Evolution of Transistor Innovation" - RF Cafe One of the news websites I frequent had a note about this "Evolution of Transistor Innovation" video produced by Intel. In a span of five minutes you are taken on a journey from the early planar MOSFET (metal oxide semiconductor field effect transistor) days to today's world of 3-dimensional, non-planar FINFET (fin field effect transistor). Physical layout, materials, and lithography advances allowed gate lengths to shrink from 12 μm in the early 1970s to a mere 10 nm by 2020. Switching speeds have gone up, die sizes have gone down, power consumption per gate has decreased, and reliability has increased. At every juncture we have been served stories of a certain end to Moore's law (a doubling of gate count every 18-24 months), and thanks to dedicated engineers and scientists the prognosticators have been proven wrong.

Posted March 8, 2022

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Intel's "Evolution of Transistor Innovation" Videos for Engineers

Intel's "Evolution of Transistor Innovation"
Videos for Engineers