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RF Micro Devices® Press Release - November 11, 2010
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RFMD Unveils High-Performance 2.3-2.7 GHz Power Amplifier IC for WiFi,
WiMAX, LTE and Other Wireless Applications
GREENSBORO,
N.C., Nov. 11, 2010 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD),
a global leader in the design and manufacture of high-performance radio
frequency components and compound semiconductor technologies, today
unveiled the
RF5632, a 2.3—2.7 GHz power amplifier IC. The
RF5632 is optimized specifically for WiMAX systems and can be designed
into multiple applications, including customer premises equipment (CPE),
gateways, access points, LTE wireless infrastructure, and WiFi-based
wireless high definition interface (WHDI) for wireless video distribution
networks.
The
RF5632 offers global customers a broadly applicable power amplifier
IC featuring a powerful combination of industry-leading RF performance
and best-in-class product size and ease-of-use. The
RF5632 integrates a 3-stage PA and power detector into an industry-leading
4mm x 4mm QFN package, significantly minimizing customer design footprint
requirements. Additionally, the
RF5632 operates from a standard 5V supply, eliminating additional
power supply requirements, enhancing design flexibility and lowering
bill-of-material costs (BOM). The
RF5632 is also fully DC and RF tested including EVM at the rated
output power, maximizing application yields and accelerating time-to-market.
The
RF5632 delivers an EVM of 2.5% and meets or exceeds WiMAX and LTE
spectral mask requirements with an output power of 28dBm in the 2.3—2.4GHz,
2.4—2.5GHz, and 2.5—2.7GHz frequency ranges. The bias of the PA may
be controlled to accommodate a 22dB gain step to increase the dynamic
range of the system. The
RF5632 offers high gain of 34dB and high linear output power, with
best-in-class efficiency. The
RF5632 maintains linearity over a wide range of temperatures and
power outputs while the external match enables tuning for output power
over multiple bands. The
RF5632 also features internal input and inter-stage matching, a
power-down mode and power detection. The
RF5632 features InGaP HBT semiconductor technology and is packaged
in a leadless chip carrier with a backside ground.
RFMD is showcasing
the
RF5632 and other industry-leading RF components at the electronica
2010 trade show in Munich Germany, November 9 through November 12. Product
brochures are available at the RFMD booth (#A4.136), and datasheets
can be obtained via RFMD's website at
www.rfmd.com or by
contacting RFMD at 336-664-1233.
Availability
The
RF5632 starts at $3.10 per 10,000 units. Samples and production
quantities are available now through RFMD's online store or through
local RFMD sales channels.
About RFMD
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader
in the design and manufacture of high-performance radio frequency components
and compound semiconductor technologies. RFMD's products enable worldwide
mobility, provide enhanced connectivity and support advanced functionality
in the cellular handset, wireless infrastructure, wireless local area
network (WLAN), CATV/broadband and aerospace and defense markets. RFMD
is recognized for its diverse portfolio of semiconductor technologies
and RF systems expertise and is a preferred supplier to the world's
leading mobile device, customer premises and communications equipment
providers.
Headquartered in Greensboro, N.C., RFMD is an ISO
9001- and ISO 14001-certified manufacturer with worldwide engineering,
design, sales and service facilities. RFMD is traded on the NASDAQ Global
Select Market under the symbol RFMD. For more information, please visit
RFMD's web site at www.rfmd.com.
RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC.
All other trade names, trademarks and registered trademarks are the
property of their respective owners.
CONTACT:
RF Micro Devices, Inc.
Doug DeLieto
VP, Investor Relations
336-678-7088
Posted 11/14/2010
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