RF Micro Devices^® Press Release - October 19, 2011

RFMD Intros RF3928 GaN Wideband Pulsed Power Amplifier

Contact:
Irma Swain
Sr. Manager, Communications
RFMD
336-931-6653
iswain@rfmd.com

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The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. High terminal impedance enables wideband operation and minimizes overall PCB real estate. This matched GaN transistor is packaged in a hermetic, flanged ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.

Features

Wideband Operation 2.8GHz to 3.4GHz
Advanced GaN HEMT and Heat-Sink Technology
Optimized Evaluation Board Layout for 50W Operation
Small Signal Gain: 12dB
Drain Efficiency: 52%

Applications

Radar
Air Traffic Control and Surveillance
General Purpose Broadband Amplifiers

For more information on RF3928, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RF3928.aspx

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Posted 10/19/2011

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RF Micro Devices® Press Release - October 19, 2011

RFMD Intros RF3928 GaN Wideband Pulsed Power Amplifier

RF Micro Devices^® Press Release - October 19, 2011