RFMD Expands Product Offerings for Cellular Backhaul Market with Highly
Integrated Point-to-Point Radio Chipsets
BALTIMORE, June 8, 2011 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc.
(Nasdaq:RFMD), a global leader in the design and manufacture of high-performance
radio frequency components and compound semiconductor technologies,
today announced the expansion of its multi-market product portfolio
to include several point-to-point (P2P) radio chipsets targeting the
growing cellular backhaul market. The highly integrated radio chipsets
combine multiple RF/microwave radio front end components and expand
RFMD's product portfolio to encompass all critical RF and IF functions
in the P2P radio transceiver.
The P2P radio market is growing rapidly as the proliferation
of smartphones and the increasing demand for mobile data are forcing
cellular operators to expand capacity in cellular backhaul networks.
RFMD's highly integrated P2P radio chipsets help to satisfy operators'
capacity expansion requirements by optimizing each front end component
for next-generation high-capacity 3G/4G radios using complex modulation
schemes. The front end components deliver industry-leading narrowband
performance, enabling the realization of state-of-the-art radio performance.
Additionally, the broadband nature of the front end components enables
radio designers to maximize design flexibility and simplify inventory
bill-of-material control.
Jeff Shealy, general manager of RFMD's Defense and Power business
unit, said, "RFMD is rapidly expanding our product portfolio in support
of the Point-to-Point microwave radio market. With the launch of these
highly integrated radio chipsets, RFMD enables our customers to develop
high-reliability, next-generation Point-to-Point radio solutions while
reducing design time requirements and lowering overall bill-of-material
costs."
Each new RFMD P2P radio chipset is available in a surface mount
QFN package. The integrated up-converters include a LO amplifier (with
integrated x2 multiplier where applicable), IQ mixer, VVA and driver
amplifier in a single package. The integrated down-converters utilize
0.15um gallium arsenide (GaAs) technology to deliver industry-leading
IIP3 and noise figure performance. Finally, the integrated MMIC VCOs
exhibit industry-leading phase noise performance coupled with flat output
power over the frequency tuning bandwidth. To complement the new radio
chipsets, RFMD also offers a comprehensive portfolio of converters and
gain blocks aimed at the IF section of the radio.
RFMD is exhibiting the above chipsets at the IEEE International
Microwave Symposium 2011, June 6-8, at the Baltimore Convention Center,
in Booth 1402.
Availability
Samples and production quantities
are available now through RFMD's online store at
http://www.rfmd.com/products
or through local RFMD sales channels.
CONTACT:
Douglas DeLieto
VP of Investor Relations
RF Micro Devices
336-678-7088
Posted 6/9/2011
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