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RFMD® Intros RFHA1006 225 - 1215 MHz, 9 W GaN Wideband Power Amplifier
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June 6, 2012 Product Announcement
Contact:
Irma Swain
Sr. Manager, Communications
RFMD
336-931-6653
iswain@rfmd.com
RFMD’s new RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless
infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density
Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain,
and large instantaneous bandwidth in a single amplifier design. This input-matched GaN transistor is packaged in
an air cavity ceramic package for excellent thermal stability through the use of advanced heat sink and power
dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input
matching network within the package that provides wideband gain and power performance in a single amplifier. An
external output match offers the flexibility of further optimizing power and efficiency for any sub-band within
the overall bandwidth.
 Features-
Advanced GaN HEMT Technology
- Output Power of 9W
- Advanced Heat-Sink Technology
- 225MHz to 1215MHz Instantaneous Bandwidth
- Input Internally Matched to 50Ω
- 28V Operation Typical Performance
- Output Power 39.5dBm
- Gain 16dB
- Power Added Efficiency 60%
- -40°C to 85°C Operating Temperature
- Large Signal Models Available
Applications- Class AB Operation
for Public Mobile Radio
- Power Amplifier Stage for Commercial Wireless Infrastructure
- General Purpose Tx Amplification
- Test Instrumentation
- Civilian and Military Radar
For more information on RFHA1006, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RFHA1006.aspx.
About
RFMD
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design
and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD’s
products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the
cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and
defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems
expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications
equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
This press release includes "forward-looking statements" within the meaning of the safe
harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements
include, but are not limited to, statements about our plans, objectives, representations and contentions and are
not historical facts and typically are identified by use of terms such as "may," "will," "should," "could,"
"expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words,
although some forward-looking statements are expressed differently. You should be aware that the forward-looking
statements included herein represent management's current judgment and expectations, but our actual results,
events and performance could differ materially from those expressed or implied by forward-looking statements. We
do not intend to update any of these forward-looking statements or publicly announce the results of any revisions
to these forward-looking statements, other than as is required under the federal securities laws. RF Micro
Devices' business is subject to numerous risks and uncertainties, including variability in operating results,
risks associated with the impact of global macroeconomic and credit conditions on our business and the business of
our suppliers and customers, our reliance on a few large customers for a substantial portion of our revenue, the
rate of growth and development of wireless markets, our ability to bring new products to market, our reliance on
inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and
customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy,
assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired
companies, including the risk that we may not realize expected synergies from our business combinations, our
ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw
material costs and availability, our ability to reduce costs and improve margins in response to declining average
selling prices, our ability to adjust production capacity in a timely fashion in response to changes in demand for
our products, dependence on gallium arsenide (GaAs) for the majority of our products, dependence on third parties,
and substantial reliance on international sales and operations. These and other risks and uncertainties, which are
described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and
statements filed with the Securities and Exchange Commission, could cause actual results and developments to be
materially different from those expressed or implied by any of these forward-looking statements.
RF MICRO
DEVICES®, RFMD® and PowerSmart® are trademarks of RFMD, LLC. All other trade names, trademarks and registered
trademarks are the property of their respective owners.
At RFMD®
Douglas DeLieto
VP, Investor Relations
336-678-5322
This message was distributed by
Posted 6/6/2012
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