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RFMD® Announces Availability of Design Kits for Agilent Technologies
Advanced Design System 2011 Software
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June 14, 2012 Press Release
Contact:
Irma Swain
Sr. Manager, Communications
RFMD
336-931-6653
iswain@rfmd.com
Greensboro, North Carolina, June 14, 2012 -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the
design and manufacture of high-performance radio frequency components and compound semiconductor technologies,
announced today that its Foundry Services business unit has updated its process design kits (PDKs) for use with
Agilent Technologies’ recently released
Advanced Design System (ADS) 2011 EDA software. The enhanced PDKs are available immediately to current and
prospective RFMD Foundry Services customers for RFMD’s Gallium Nitride (GaN) and Gallium Arsenide (GaAs) process
technologies.
The RFMD PDKs support a complete ADS front- to back-end MMIC design flow with scalable
devices, a native design rule checker, and the layout capabilities in ADS 2011. The PDKs work seamlessly with ADS
2011, ADS 2009 Update 1 and ADS 2008 Update 2, enabling RFMD Foundry Services customers to take full advantage of
the significant performance advantages of ADS 2011.
RFMD’s GaN and GaAs process technologies are available
to Foundry Services customers, supported by RFMD’s industry-leading cycle times. RFMD’s foundry offerings include
GaN1 (GaN for high power), a 0.5-micron GaN on SiC process technology enabling 65V CW operation and optimized for
maximum performance at 4 GHz and below. RFMD’s GaN1 power technology provides a high breakdown voltage above 400V,
while RFMD’s GaN2 is a 0.5-micron GaN on SiC process technology offering high linearity for high performance
communications systems. Both GaN technologies are manufactured in RFMD’s Greensboro, NC, fab, one of the world’s
largest III-V fabs.
The Greensboro fab also manufactures HBT8D, RFMD’s high-volume rugged InGap technology for
handset and mixed signal applications, and IPC3, an integrated passive component technology that complements
RFMD’s GaN technology portfolio with high power compatibility.
Additional RFMD foundry offerings include
FD25, a low noise, 0.25-micron GaAs pHEMT technology, and FD30, a high power 0.3-micron GaAs pHEMT technology,
both of which support applications up through 25 GHz. RFMD’s technology portfolio also includes FET1H, a
0.6-micron GaAs pHEMT technology, and FET2D, a 0.6-micron GaAs E/D pHEMT technology. Each of RFMD’s pHEMT
technologies is manufactured in the Company’s Newton Aycliffe, UK, fab.
Dr. Tom Joseph, manager of
technology in RFMD’s Foundry Services business unit, said, “The ADS 2011 release provides RFMD Foundry customers
access to Agilent’s latest multi-technology platform for our GaN and GaAs process technologies. By leveraging
Agilent’s new Library architecture and simulation enhancements, RFMD’s foundry customers can improve their design
efficiencies and reduce time-to-market for their end market products.”
“We are very happy that our mutual
customers can now leverage the ADS 2011 product enhancements in RFMD’s GaN and GaAs technologies,” said Juergen
Hartung, foundry program manager of Agilent’s EEsof EDA organization. “With these PDKs, our customers can now
enjoy the industry’s most comprehensive multi-technology design platform using Momentum, the industry-leading 3-D
planar EM simulator, our integrated full 3-D FEM engine, the industry-proven design-for-manufacturing capabilities
inside ADS, and an upgraded design rule checker. These capabilities are just some of the reasons the majority of
MMIC designers choose ADS to increase performance, consistency and yield.”
For more information on RFMD's
Foundry Services go to
www.rfmd.com/foundry or contact
RFMDFoundryServices@rfmd.com.
About RFMD
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global
leader in the design and manufacture of high-performance radio frequency components and compound semiconductor
technologies. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced
functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband
and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and
RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of
the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not
limited to, statements about our plans, objectives, representations and contentions and are not historical facts
and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan,"
"anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some
forward-looking statements are expressed differently. You should be aware that the forward-looking statements
included herein represent management's current judgment and expectations, but our actual results, events and
performance could differ materially from those expressed or implied by forward-looking statements. We do not
intend to update any of these forward-looking statements or publicly announce the results of any revisions to
these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices'
business is subject to numerous risks and uncertainties, including variability in operating results, risks
associated with the impact of global macroeconomic and credit conditions on our business and the business of our
suppliers and customers, our reliance on a few large customers for a substantial portion of our revenue, the rate
of growth and development of wireless markets, our ability to bring new products to market, our reliance on
inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and
customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy,
assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired
companies, including the risk that we may not realize expected synergies from our business combinations, our
ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw
material costs and availability, our ability to reduce costs and improve margins in response to declining average
selling prices, our ability to adjust production capacity in a timely fashion in response to changes in demand for
our products, dependence on gallium arsenide (GaAs) for the majority of our products, dependence on third parties,
and substantial reliance on international sales and operations. These and other risks and uncertainties, which are
described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and
statements filed with the Securities and Exchange Commission, could cause actual results and developments to be
materially different from those expressed or implied by any of these forward-looking statements.
RF MICRO
DEVICES®, RFMD® and PowerSmart® are trademarks of RFMD, LLC. All other trade names, trademarks and registered
trademarks are the property of their respective owners.
At RFMD®
Douglas DeLieto
VP, Investor Relations
336-678-5322
Posted 6/26/2012
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