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RFMD® Intros RFPA1012 GaAs HBT 400 MHz to 2700 MHz Power Amplifier
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June 11, 2012 Product Announcement
Contact: Irma Swain
Sr. Manager, Communications RFMD 336-931-6653
iswain@rfmd.com
RFMD’s new
RFPA1012
GaAs HBT linear Power Amplifier is specifically designed for wireless infrastructure applications. Using a GaAs
HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that
operates over a broad frequency range. It also offers low noise figure making it an excellent solution for 2nd and
3rd stage LNAs.
Features
- High Linearity: OIP3 = 44 dBm at 900 MHz
- Low Noise: NF = 3.5 dB at 900 MHz
- Low DC Power: 5V, 90 mA
- 400 MHz to 2700 MHz Operation
Applications
- GaAs Pre-Driver for Base Station Amplifiers
- Class AB Operation for DCS, PCS, UMTS, and WiFi Transceiver Applications
- 2nd/3rd Stage LNA for Wireless Infrastructure
This product is currently available in production quantities. Pricing begins at $2.76 each for 100 pieces.
For more information on RFPA1012, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RFPA1012.aspx.
About RFMD RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global
leader in the design and manufacture of high-performance radio frequency components and compound semiconductor
technologies. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced
functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband
and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and
RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
This press release includes "forward-looking statements" within the meaning of the safe
harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements
include, but are not limited to, statements about our plans, objectives, representations and contentions and are
not historical facts and typically are identified by use of terms such as "may," "will," "should," "could,"
"expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words,
although some forward-looking statements are expressed differently. You should be aware that the forward-looking
statements included herein represent management's current judgment and expectations, but our actual results,
events and performance could differ materially from those expressed or implied by forward-looking statements. We
do not intend to update any of these forward-looking statements or publicly announce the results of any revisions
to these forward-looking statements, other than as is required under the federal securities laws. RF Micro
Devices' business is subject to numerous risks and uncertainties, including variability in operating results,
risks associated with the impact of global macroeconomic and credit conditions on our business and the business of
our suppliers and customers, our reliance on a few large customers for a substantial portion of our revenue, the
rate of growth and development of wireless markets, our ability to bring new products to market, our reliance on
inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and
customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy,
assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired
companies, including the risk that we may not realize expected synergies from our business combinations, our
ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw
material costs and availability, our ability to reduce costs and improve margins in response to declining average
selling prices, our ability to adjust production capacity in a timely fashion in response to changes in demand for
our products, dependence on gallium arsenide (GaAs) for the majority of our products, dependence on third parties,
and substantial reliance on international sales and operations. These and other risks and uncertainties, which are
described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and
statements filed with the Securities and Exchange Commission, could cause actual results and developments to be
materially different from those expressed or implied by any of these forward-looking statements.
RF MICRO
DEVICES®, RFMD® and PowerSmart® are trademarks of RFMD, LLC. All other trade names, trademarks and registered
trademarks are the property of their respective owners. At RFMD® Douglas DeLieto
VP, Investor Relations 336-678-5322
This message was distributed by
Posted 6/11/2012
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