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High voltage GaN HEMTs for hi-rel applications now available in lower current
15 A and 30 A versions
Teledyne e2v HiRel TDGD27xDEP
Silicon Labs' Si827x isolated gate
driver family
Key Features
- 650 V Enhancement mode power transistor
- Bottom-side cooled configuration
- IDS(max) = 15 A or 30 A
- Ultra-low FOM Island Technology®die
- Low inductance GaNPX® package
- Very high switching frequency (> 100 MHz)
- Fast and controllable fall and rise times
- Zero reverse recovery loss
Applications
- High efficiency power conversion
- High density power conversion
- AC-DC Converters
- ZVS Phase Shifted Full Bridge
- Half & Full Bridge topologies
- Synchronous Buck or Boost
- Uninterruptable Power Supplies
- Motor Drives
- Solar and Wind Power
- Fast Battery Charging
- On Board Battery Chargers
MILPITAS, CA - January 6, 2021 - Teledyne
e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility
Transistors) to its industry-leading, 650-volt, high-power family of products based
on GaN Systems technology.
The two new high-power HEMTs,
TDG650E30B and
TDG650E15B, deliver lower current performance of 30- and 15-amp respectively,
while the original 650 V introduced last year, the
TDG650E60, delivers 60 A.
These 650 V GaN HEMTs are the highest voltage GaN power devices available
on the market for demanding high-reliability military, avionics, and space applications.
They are an ideal fit for applications like power supply, motor control, and half
bridge topologies.
They come with a bottom-side cooled configuration and feature ultra-low FOM Island
Technology® die, low inductance GaNPX® packaging, very high frequency switching
of >100 MHz, fast and controllable fall and rise times, reverse current capability,
and more.
"We are pleased to continue the build-out of our 650 V family of high power
GaN HEMTs for applications requiring the highest reliability such as space.” said
Mont Taylor, VP of Business Development for Teledyne e2v HiRel. "We believe the
smaller sized packaging of these new devices will really benefit customers designing
for the highest power density projects."
The TDG650E15B and TDG650E30B are both enhancement mode GaN-on-Silicon power
transistors that allow for high current, high voltage breakdown and high switching
frequency while offering very low junction-to-case thermal resistance for high-power
applications.
Gallium nitride devices have revolutionized power conversion in other industries
and are now available in radiation tolerant, plastic encapsulated packaging that
has undergone stringent reliability and electrical testing to ensure mission critical
success. The release of these new GaN HEMTs delivers to customers the efficiency,
size, and power-density benefits required in critical aerospace and defense power
applications.
For all product lines, Teledyne e2v HiRel performs the most demanding qualification
and testing tailored to the highest reliability applications. For power devices,
this regime includes sulfuric test, high altitude simulation, dynamic burn-in, step
stress up to 175°C ambient, 9-volt gate voltage, and full temperature testing. Unlike
silicon on carbide (SiC) devices, these two devices can easily be implemented in
parallel to increase the load current or lower the effective RDSon.
Both of these new devices are now available for ordering and immediate purchase.
About Teledyne e2v HiRel Electronics
Teledyne e2v innovations lead developments in space, transportation, defense,
and industrial markets. Teledyne e2v's unique approach involves listening to the
market and to the application challenges of customers and partnering with our customers
to provide innovative standard, semi-custom or fully custom solutions, bringing
increased value to their systems. www.tdehirel.com
Contact Info:
Darrek Porter Director of Marketing Teledyne Microwave Solutions Office:
(404)-368-9714 Mobile: (404)-394-1347 Web:
www.teledyne.com E-mail:
darrek.porter@teledyne.com
Posted January 7, 2021
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